The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Apr. 14, 2006
Dong Chul Kim, Suwon-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Myoung-jae Lee, Suwon-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
In-gyu Baek, Seoul, KR;
Seung-eon Ahn, Seoul, KR;
Byoung-ho Park, Yongin-si, KR;
Young-kwan Cha, Yongin-si, KR;
Sang-jin Park, Yongin-si, KR;
Dong Chul Kim, Suwon-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Myoung-jae Lee, Suwon-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
In-gyu Baek, Seoul, KR;
Seung-eon Ahn, Seoul, KR;
Byoung-ho Park, Yongin-si, KR;
Young-kwan Cha, Yongin-si, KR;
Sang-jin Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.