Seoul, South Korea

Byoung-ho Park


Average Co-Inventor Count = 5.9

ph-index = 2

Forward Citations = 4(Granted Patents)


Location History:

  • Yongin-si, KR (2011)
  • Seoul, KR (2010 - 2012)

Company Filing History:


Years Active: 2010-2012

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Byoung-ho Park: Innovator in Memory Device Technology

Introduction

Byoung-ho Park is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory device technology, holding a total of 3 patents. His work focuses on innovative methods for fabricating memory devices that enhance performance and stability.

Latest Patents

One of his latest patents is titled "Method of fabricating a resistance based memory device and the memory device." This invention relates to a method of fabricating a memory device that includes forming a lower electrode and an oxide layer on a lower structure. The process involves radiating an energy beam on a specific region of the oxide layer. The memory device features a lower structure and an oxide layer, with the oxide layer containing an electron beam radiation region that receives radiation from an electron beam source. This creates an artificially formed current path through the oxide layer to the lower electrode, which helps decrease and stabilize the reset current of the memory device.

Another notable patent is "Non-volatile memory devices and methods of fabricating the same." This invention describes a memory device that includes a switching device and a storage node coupled with the switching device. The storage node consists of a first electrode, a second electrode, a data storage layer, and at least one contact layer. The data storage layer is positioned between the first and second electrodes and may include a transition metal oxide or aluminum oxide. The contact layer can be located above or below the data storage layer and may consist of a conductive metal oxide.

Career Highlights

Byoung-ho Park is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His innovative approaches have positioned him as a key player in the development of advanced memory devices.

Collaborations

Throughout his career, Park has collaborated with notable colleagues, including Seung-eon Ahn and Hye-Young Kim. These partnerships have fostered a collaborative environment that enhances the innovation process.

Conclusion

Byoung-ho Park is a distinguished inventor whose work in memory device technology has led to significant advancements in the field. His patents reflect a commitment to innovation and excellence, making him a valuable asset to Samsung Electronics Co., Ltd. and the broader technological community.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…