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For the Inventor, By the Inventor

Suwon-si, South Korea

In-Kyeong Yoo

USPTO Granted Patents = 25

 

Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 192(Granted Patents)


Location History:

  • Kyungki-do, KR (1998)
  • Yongin, KR (2002 - 2005)
  • Suwon-si, KR (2006 - 2013)

Company Filing History:

goldMedal20 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal5 out of 832,680 
Other
 patents

Years Active: 1998-2013

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25 patents (USPTO):
1. 8350262 - Nonvolatile memory device and nonvolatile memory array including the same (2013-01-08),
2. 8101983 - Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same (2012-01-24),
3. 7943926 - Nonvolatile memory device and nonvolatile memory array including the same (2011-05-17),
4. 7936044 - Non-volatile memory devices and methods of fabricating the same (2011-05-03),
5. 7935953 - Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same (2011-05-03),
6. 7859035 - Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same (2010-12-28),
7. 7835167 - Magnetic domain data storage devices and methods of operating the same (2010-11-16),
8. 7821809 - Nonvolatile memory device and method including resistor and transistor (2010-10-26),
9. 7714313 - Resistive RAM having at least one varistor and methods of operating the same (2010-05-11),
10. 7638361 - Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines (2009-12-29),
11. 7602042 - Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same (2009-10-13),
12. 7482648 - Electronic device and method of manufacturing the same (2009-01-27),
13. 7439566 - Semiconductor memory device having metal-insulator transition film resistor (2008-10-21),
14. 7417271 - Electrode structure having at least two oxide layers and non-volatile memory device having the same (2008-08-26),
15. 7414295 - Transistor and method of operating transistor (2008-08-19),

Title: Innovations in Nonvolatile Memory Devices: The Contributions of In-Kyeong Yoo

Introduction

In-Kyeong Yoo is a prominent inventor based in Suwon-si, South Korea, with an impressive portfolio of 25 patents. His work significantly contributes to the field of nonvolatile memory technology, showcasing ingenuity and technical expertise. Throughout his career, In-Kyeong has developed numerous inventions that enhance the efficiency and functionality of memory devices.

Latest Patents

In-Kyeong Yoo’s latest patents illustrate his expertise in nonvolatile memory devices. One patent focuses on a nonvolatile memory device that possesses self-presence diode characteristics. This device comprises a lower electrode, a first semiconductor oxide layer atop the lower electrode, followed by a second semiconductor oxide layer, and an upper electrode positioned on the second layer. Another noteworthy patent involves a nonvolatile memory device that includes one switching device and one resistant material. It presents a unique method of manufacturing such a device, highlighting a substrate incorporated with a transistor and a data storage unit. This data storage unit is designed with a material layer that exhibits varying resistance characteristics across different voltage ranges.

Career Highlights

In-Kyeong Yoo has dedicated his career to advancing memory technology, with a significant portion of his work taking place at Samsung Electronics Co., Ltd. There, he has collaborated with fellow innovators, driving the company’s efforts in developing cutting-edge nonvolatile memory solutions. His contributions have placed him at the forefront of innovation in the field.

Collaborations

Throughout his career, In-Kyeong has worked alongside notable colleagues such as Myoung-jae Lee and Seung-eon Ahn. These collaborations have fostered an environment of creativity and advancement, leading to the successful development of several innovative memory solutions that have a lasting impact in the industry.

Conclusion

In-Kyeong Yoo’s contributions in the realm of nonvolatile memory devices are commendable. With an enduring commitment to innovation, evidenced by his numerous patents, he continues to shape the future of memory technology. His work not only reflects his expertise but also inspires future generations of inventors in the tech field.

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