The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Jul. 13, 2006
Jae-woong Hyun, Uijeongbu-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Yoon-dong Park, Yongin-si, KR;
Choong-rae Cho, Gimhae-si, KR;
Sung-il Cho, Boryeong-si, KR;
Jae-Woong Hyun, Uijeongbu-si, KR;
In-Kyeong Yoo, Suwon-si, KR;
Yoon-Dong Park, Yongin-si, KR;
Choong-Rae Cho, Gimhae-si, KR;
Sung-Il Cho, Boryeong-si, KR;
Samsung Electronics, Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.