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For the Inventor, By the Inventor

Gimhae-si, South Korea

Choong-Rae Cho

USPTO Granted Patents = 10

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 151(Granted Patents)


Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2007-2013

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10 patents (USPTO):Explore Patents
1. 8525142 - Non-volatile variable resistance memory device and method of fabricating the same (2013-09-03),
2. 8125021 - Non-volatile memory devices including variable resistance material (2012-02-28),
3. 7859035 - Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same (2010-12-28),
4. 7638361 - Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines (2009-12-29),
5. 7498600 - Variable resistance random access memory device and a method of fabricating the same (2009-03-03),
6. 7439566 - Semiconductor memory device having metal-insulator transition film resistor (2008-10-21),
7. 7417271 - Electrode structure having at least two oxide layers and non-volatile memory device having the same (2008-08-26),
8. 7414295 - Transistor and method of operating transistor (2008-08-19),
9. 7361554 - Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device (2008-04-22),
10. 7250649 - Capacitor of a memory device and fabrication method thereof (2007-07-31),

Title: Innovations of Choong-Rae Cho: A Pioneer in Non-Volatile Memory Devices

Introduction

Choong-Rae Cho, a distinguished inventor based in Gimhae-si, KR, has made significant contributions to the field of memory technology. With a total of 10 patents to his name, his innovative work primarily focuses on non-volatile variable resistance memory devices.

Latest Patents

Among Cho's latest patents is the invention of a non-volatile variable resistance memory device and a method of fabricating the same. This innovative memory device includes a lower electrode, a buffer layer, and an oxide layer that features variable resistance characteristics. Additionally, another notable patent details a non-volatile memory device comprising a first oxide layer, a second oxide layer, and a buffer layer formed on a lower electrode, showcasing his commitment to advancing memory technology.

Career Highlights

Throughout his career, Choong-Rae Cho has been associated with leading technology firms, most notably Samsung Electronics Co., Ltd. His experience in these roles has allowed him to refine his expertise and contribute substantially to advancements in memory technology.

Collaborations

Cho has also worked alongside talented colleagues, including In-Kyeong Yoo and Eun-hong Lee, enhancing collaborative efforts on innovative projects. These partnerships have contributed to the successful development and eventual patenting of several cutting-edge technologies.

Conclusion

Choong-Rae Cho stands out as a prominent inventor in the realm of non-volatile memory devices. His innovative patents and collaborative spirit continue to shape the future of memory technologies, emphasizing his significant role in advancing this critical field.

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