The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Apr. 18, 2007
Choong-rae Cho, Gimhae-si, KR;
Eun-hong Lee, Anyang-si, KR;
El Mostafa Bourim, Yongin-si, KR;
Chang-wook Moon, Seoul, KR;
Choong-Rae Cho, Gimhae-si, KR;
Eun-Hong Lee, Anyang-si, KR;
El Mostafa Bourim, Yongin-si, KR;
Chang-Wook Moon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the lower electrode is composed of at least one of Pt, Ru, Ir, IrOx and an alloy thereof, the second oxide layer is a transition metal oxide, the buffer layer is composed of a p-type oxide and the upper electrode is composed of a material selected from Ni, Co, Cr, W, Cu or an alloy thereof.