The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Dec. 01, 2006
Chang-wook Moon, Seoul, KR;
Sang-mock Lee, Yongin-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Seung-woon Lee, Yongin-si, KR;
El Mostafa Bourim, Yongin-si, KR;
Eun-hong Lee, Anyang-si, KR;
Choong-rae Cho, Gimhae-si, KR;
Chang-wook Moon, Seoul, KR;
Sang-mock Lee, Yongin-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Seung-woon Lee, Yongin-si, KR;
El Mostafa Bourim, Yongin-si, KR;
Eun-hong Lee, Anyang-si, KR;
Choong-rae Cho, Gimhae-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.