The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Feb. 06, 2007
Applicants:
Choong-rae Cho, Gimhae-si, KR;
Eun-hong Lee, Anyang-si, KR;
Stefanovich Genrikh, Suwon-si, KR;
El Mostafa Bourim, Yongin-si, KR;
Inventors:
Choong-Rae Cho, Gimhae-si, KR;
Eun-Hong Lee, Anyang-si, KR;
Stefanovich Genrikh, Suwon-si, KR;
El Mostafa Bourim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a variable resistance random access memory device having an n+ interfacial layer and a method of fabricating the same. The variable resistance random access memory device may include a lower electrode, an n+ interfacial layer on the lower electrode, a buffer layer on the n+ interfacial layer, an oxide layer on the buffer layer and having a variable resistance characteristic and an upper electrode on the oxide layer.