The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Jan. 19, 2007
Stefanovich Genrikh, Suwon-si, KR;
Choong-rae Cho, Gimhae-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Eun-hong Lee, Anyang-si, KR;
Sung-il Cho, Boryeong-si, KR;
Chang-wook Moon, Seoul, KR;
Stefanovich Genrikh, Suwon-si, KR;
Choong-rae Cho, Gimhae-si, KR;
In-kyeong Yoo, Suwon-si, KR;
Eun-hong Lee, Anyang-si, KR;
Sung-Il Cho, Boryeong-si, KR;
Chang-wook Moon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.