The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7250649 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 31, 2007

Filed:

May. 03, 2005
Applicants:

Young-soo Park, Suwon-si, KR;

Jung-hyun Lee, Yongin-si, KR;

Choong-rae Cho, Gimhae-si, KR;

June-mo Koo, Seoul, KR;

Suk-pil Kim, Yongsin-si, KR;

Sang-min Shin, Seoul, KR;

Inventors:

Young-soo Park, Suwon-si, KR;

Jung-hyun Lee, Yongin-si, KR;

Choong-rae Cho, Gimhae-si, KR;

June-mo Koo, Seoul, KR;

Suk-pil Kim, Yongsin-si, KR;

Sang-min Shin, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.


Find Patent Forward Citations

Park, Young-soo. (2007). Capacitor of a memory device and fabrication method thereof (U.S. Patent No. 7250649). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7250649

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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