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Yongin-si, South Korea

Jung-hyun Lee

USPTO Granted Patents = 67 

Average Co-Inventor Count = 2.7

ph-index = 11

Forward Citations = 978(Granted Patents)


Inventors with similar research interests:


Location History:

  • Kyungki-do, KR (2006)
  • Yongin, KR (2004 - 2010)
  • Suwon, KR (2003 - 2011)
  • Busan, KR (2013)
  • Suwon-si, KR (2006 - 2014)
  • Yongin-si, KR (2006 - 2016)

Company Filing History:

goldMedal65 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal2 out of 427 
 
Samsung Display Devices Co., Ltd.
 patents

Years Active: 2003-2016

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67 patents (USPTO):Explore Patents
1. 9318573 - Field effect transistor having germanium nanorod and method of manufacturing the same (2016-04-19),
2. 8748969 - Non-volatile memory device including dummy electrodes and method of fabricating the same (2014-06-10),
3. 8680638 - Stack-type image sensor (2014-03-25),
4. 8632855 - Methods of preparing a graphene sheet (2014-01-21),
5. 8564889 - Zoom lens and photographing device having the same (2013-10-22),
6. 8536560 - Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof (2013-09-17),
7. 8513634 - Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same (2013-08-20),
8. 8507112 - Data recording medium for data storage and method of recording or erasing data using the same (2013-08-13),
9. 8445366 - Electron beam annealing apparatus and annealing methods using the same (2013-05-21),
10. 8426837 - Resistive memory device and method of manufacturing the same (2013-04-23),
11. 8362455 - Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same (2013-01-29),
12. 8361561 - Method of manufacturing silicon film by using silicon solution process (2013-01-29),
13. 8324085 - Method of manufacturing crystalline silicon (2012-12-04),
14. 8299521 - Nonvolatile memory device and method of fabricating the same (2012-10-30),
15. 8193569 - Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same (2012-06-05),

As a client, you may find the following article on inventor Jung-hyun Lee quite informative:

Title: Jung-hyun Lee: Pioneering Innovations in Semiconductor Technology

Introduction: Jung-hyun Lee, a prominent inventor based in Yongin-si, KR, is making significant strides in the field of semiconductor technology with his groundbreaking patents and inventions.

Latest Patents:

1. Field Effect Transistor with Germanium Nanorod: Lee's patented field effect transistor incorporates a Ge nanorod, enhancing performance and functionality. The manufacturing method ensures efficiency and reliability in semiconductor devices.

2. Non-Volatile Memory Device with Dummy Electrodes: Lee's invention of a non-volatile memory device includes dummy electrodes, optimizing data storage and retrieval. The fabrication method underscores innovation in memory technology.

Career Highlights: With an impressive portfolio of 67 patents, Jung-hyun Lee has been instrumental in advancing semiconductor technology. Notably, he has contributed to leading companies such as Samsung Electronics Co., Ltd. and Samsung Display Devices Co., Ltd., showcasing his expertise and dedication to innovation.

Collaborations: Lee has collaborated with esteemed professionals in the industry, including Sang-Jun Choi and Yo-sep Min, demonstrating his collaborative spirit and teamwork in driving technological advancements forward.

Conclusion: Jung-hyun Lee's innovative contributions in semiconductor technology underscore his position as a trailblazing inventor. His patents and inventions continue to shape the landscape of the industry, paving the way for future technological advancements in the field.

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