The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Oct. 21, 2009
Applicants:
Jung-hyun Lee, Suwon-si, KR;
Dong-joon MA, Anyang-si, KR;
Inventors:
Jung-hyun Lee, Suwon-si, KR;
Dong-joon Ma, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/26 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process.