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For the Inventor, By the Inventor

Anyang-si, South Korea

Dong-joon Ma

USPTO Granted Patents = 16 

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 287(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2005 - 2008)
  • Anyang, KR (2004 - 2010)
  • Anyang-si, KR (2006 - 2014)

Company Filing History:

goldMedal16 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2004-2014

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16 patents (USPTO):Explore Patents
1. 8748969 - Non-volatile memory device including dummy electrodes and method of fabricating the same (2014-06-10),
2. 8632855 - Methods of preparing a graphene sheet (2014-01-21),
3. 8445366 - Electron beam annealing apparatus and annealing methods using the same (2013-05-21),
4. 8361561 - Method of manufacturing silicon film by using silicon solution process (2013-01-29),
5. 8324085 - Method of manufacturing crystalline silicon (2012-12-04),
6. 8299521 - Nonvolatile memory device and method of fabricating the same (2012-10-30),
7. 8003546 - Method of growing silicon and method of manufacturing solar cell using the same (2011-08-23),
8. 7740738 - Inductively coupled antenna and plasma processing apparatus using the same (2010-06-22),
9. 7404879 - Ionized physical vapor deposition apparatus using helical self-resonant coil (2008-07-29),
10. 7252716 - Gas injection apparatus for semiconductor processing system (2007-08-07),
11. 7210424 - High-density plasma processing apparatus (2007-05-01),
12. 7170777 - Phase change memory device and method of operating the same (2007-01-30),
13. 7053448 - SONOS type memory device (2006-05-30),
14. 7052583 - Magnetron cathode and magnetron sputtering apparatus comprising the same (2006-05-30),
15. 6966952 - Apparatus of depositing thin film with high uniformity (2005-11-22),

Title: Dong-joon Ma: Innovator in Non-volatile Memory and Graphene Technology

Introduction: Dong-joon Ma is a prominent inventor based in Anyang-si, South Korea. With an impressive portfolio of 16 patents, he has made significant contributions to the fields of non-volatile memory devices and carbon-based materials.

Latest Patents: Among his latest innovations, Dong-joon Ma has developed a non-volatile memory device that includes dummy electrodes. This device features a substrate with a plurality of semiconductor pillars, control gate electrodes stacked on the substrate, and dummy electrodes that are spaced apart from the control gate electrodes. The innovative design allows for enhanced performance in memory devices. Additionally, he has also worked on methods of preparing a graphene sheet by aligning carbon-containing materials on a substrate and utilizing an annealing process to form the carbon-based sheet.

Career Highlights: Dong-joon Ma is currently associated with Samsung Electronics Co., Ltd., a leading company in technology and innovation. His focus on memory devices and graphene technology signifies his expertise in advanced materials and electronic components.

Collaborations: Throughout his career, Dong-joon has collaborated with notable colleagues such as Jung-hyun Lee and Yuri Nikolaevich Tolmachev. These partnerships have fostered the exchange of ideas and facilitated the development of cutting-edge technologies.

Conclusion: Dong-joon Ma continues to be a key player in the field of innovation, with a track record of patents that showcase his dedication to advancing technology in memory devices and materials science. His work contributes to the ongoing evolution of electronic devices and holds promise for future developments.

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