The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Aug. 01, 2005
Sang-jun Choi, Gyeonggi-do, KR;
Jung-hyun Lee, Gyeonggi-do, KR;
Dong-joon MA, Gyeonggi-do, KR;
Wan-jun Park, Seoul, KR;
Young-soo Park, Gyeonggi-do, KR;
Sang-jun Choi, Gyeonggi-do, KR;
Jung-hyun Lee, Gyeonggi-do, KR;
Dong-joon Ma, Gyeonggi-do, KR;
Wan-jun Park, Seoul, KR;
Young-soo Park, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.