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For the Inventor, By the Inventor

Seoul, South Korea

Wan-jun Park

USPTO Granted Patents = 40 

 

Average Co-Inventor Count = 3.8

ph-index = 8

Forward Citations = 237(Granted Patents)


Company Filing History:

goldMedal40 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2004-2012

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40 patents (USPTO):
1. 8320166 - Magnetic random access memory and method of reading data from the same (2012-11-27),
2. 8294348 - Field emission electrode, method of manufacturing the same, and field emission device comprising the same (2012-10-23),
3. 8272914 - Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls (2012-09-25),
4. 8237214 - Non-volatile memory device including metal-insulator transition material (2012-08-07),
5. 8221716 - Method of synthesizing carbon nanotubes (2012-07-17),
6. 8164130 - Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same (2012-04-24),
7. 8101983 - Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same (2012-01-24),
8. 7936030 - Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween (2011-05-03),
9. 7918989 - Gas sensor and method thereof (2011-04-05),
10. 7897412 - Method of manufacturing magnetic random access memory including middle oxide layer (2011-03-01),
11. 7816175 - Nano-elastic memory device and method of manufacturing the same (2010-10-19),
12. 7811833 - Method of manufacturing a multi-purpose magnetic film structure (2010-10-12),
13. 7799307 - Method of growing single-walled carbon nanotubes (2010-09-21),
14. 7767502 - Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate (2010-08-03),
15. 7767140 - Method for manufacturing zinc oxide nanowires and device having the same (2010-08-03),

Title: Wan-jun Park: Innovator in Magnetic Memory Technology

Introduction

Wan-jun Park, an accomplished inventor based in Seoul, South Korea, has made significant contributions to the field of semiconductor technology with a remarkable portfolio of 40 patents. His expertise has been pivotal in advancing innovations in magnetic random access memory and field emission devices.

Latest Patents

Among Wan-jun Park's latest patents is a groundbreaking development in magnetic random access memory (MRAM). This invention encompasses a memory cell that features a first transistor and a first magnetic tunneling junction (MTJ) layer, as well as a reference cell designed to facilitate the reading of data stored within the memory cell. The reference cell consists of second and third MTJ layers aligned in parallel and a second transistor that operates in series with them, exhibiting twice the driving capability of the first transistor.

Another significant patent pertains to a field emission electrode, which includes a method for its manufacturing and a field emission device that incorporates the electrode itself. This innovative design features a substrate with carbon nanotubes and a conductive layer, where conductive nanoparticles are attached to the external walls of the carbon nanotubes, enhancing performance and efficiency.

Career Highlights

Wan-jun Park is currently a key figure at Samsung Electronics Co., Ltd., where he plays an instrumental role in shaping the future of electronic memory technology. His extensive research and development efforts have not only contributed to his patent portfolio but have also positioned him as a leader in the industry.

Collaborations

Throughout his career, Wan-jun Park has collaborated with notable peers including Tae-wan Kim and Sang-jin Park. These partnerships reflect a commitment to teamwork and innovation, ensuring that cutting-edge technologies are developed to meet the demands of modern electronics.

Conclusion

Wan-jun Park's dedication to innovation and his impressive track record of patents underscore his influence on the field of technology. His work at Samsung Electronics Co., Ltd. continues to pave the way for advancements in memory and electronic devices, ensuring a lasting impact on the industry.

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