The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Sep. 05, 2008
Wan-jun Park, Seoul, KR;
Tae-wan Kim, Yongin-si, KR;
Sang-jin Park, Pyeongtaek-si, KR;
Dae-jeong Kim, Seoul, KR;
Seung-jun Lee, Seoul, KR;
Hyung-soon Shin, Seoul, KR;
Wan-jun Park, Seoul, KR;
Tae-wan Kim, Yongin-si, KR;
Sang-jin Park, Pyeongtaek-si, KR;
Dae-jeong Kim, Seoul, KR;
Seung-jun Lee, Seoul, KR;
Hyung-soon Shin, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.