The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
May. 23, 2006
Sang-jin Park, Pyeongtae-si, KR;
Tae-wan Kim, Yongin-si, KR;
Jung-hyun Lee, Yongin-si, KR;
Wan-jun Park, Seoul, KR;
I-hun Song, Seongnam-si, KR;
Sang-jin Park, Pyeongtae-si, KR;
Tae-wan Kim, Yongin-si, KR;
Jung-hyun Lee, Yongin-si, KR;
Wan-jun Park, Seoul, KR;
I-hun Song, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.