The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Sep. 14, 2007
Tae-wan Kim, Yongin-si, KR;
Wan-jun Park, Seoul, KR;
Sang-jin Park, Pyeongtaek-si, KR;
In-jun Hwang, Yongin-si, KR;
Soon-ju Kwon, Pohang-si, KR;
Young-keun Kim, Seoul, KR;
Richard J. Gambino, Stony Brook, NY (US);
Tae-wan Kim, Yongin-si, KR;
Wan-jun Park, Seoul, KR;
Sang-jin Park, Pyeongtaek-si, KR;
In-jun Hwang, Yongin-si, KR;
Soon-ju Kwon, Pohang-si, KR;
Young-keun Kim, Seoul, KR;
Richard J. Gambino, Stony Brook, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.