Samsung Electronics Co., Ltd.

Wan-jun Park

Tae-wan Kim

Sang-jin Park

Yo-sep Min

Richard Joseph Gambino

Young-Soo Park

In-Jun Hwang

Sun-Ae Seo

Seung-Jun Lee

In-kyeong Yoo

Do-Young Kim

Jung-hyun Lee

I-hun Song

Myoung-jae Lee

Young-min Choi

Jang-yeon Kwon

Soo-doo Chae

June-key Lee

Sang-jun Choi

Kyung-Jin Lee

Jung-Hyun Lee

Byoung-lyong Choi

Jang-Eun Lee

Kee-won Kim

Chung-woo Kim

Eun-kyung Lee

Jae-woong Hyun

Sang-Hun Jeon

In-Kyeong Yoo

Won-joo Kim

Dae-Jeong Kim

Jo-won Lee

Young-Hee Lee

Dong-joon Ma

Jeong-Hee Han

Jang-Yeon Kwon

Eun-Ju Bae

Dong-hun Kang

Eun-ju Bae

Yo-Sep Min

I-Hun Song

Hyung-soon Shin

Young-Keun Kim

Soon-ju Kwon

Young-Kwan Cha

Joo-han Chang

Taek-dong Lee

Byeong-kook Park

Chan-Jin Park

Soo-hwan Jeong

Jong-Bong Park

Soo-Hwan Jeong

Ju-Hye Ko

Jao-woong Hyun

Alexander Alexandrovich Saranin

Andrey Vadimovich Zotov

Cheol-min Yang

Ju-hye Ko

June-Key 241-504 Hwanggol Maeul Lee

Myoung-Jae Lee

Yo-Sep 104-1506 Dujin Apt Min

Do-Young 842-1104 Byeokjeokgol 8-Danjii Kim

Sun-Ae 932-301 Seo

Young-Soo 204-502 Dongsuwon Lg Village Park

Young-Min 205-1203 Unam Jugong 2-Danji Apt Choi

Soo-Doo 326-301 Sibeom-Danji Hanyang Apt Chae

A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.

Magnetic random access memory and method of reading data from the same

Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Field emission electrode, method of manufacturing the same, and field emission device comprising the same

Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls

A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

Non-volatile memory device including metal-insulator transition material

A method of synthesizing carbon nanotubes including forming a solution including an organometallic compound containing catalyst particles and a solvent, adding at least one support to the solution, wherein the carbon nanotubes are synthesized on a surface of the at least one support, and applying radiation to the solution to which the at least one support is added.

Method of synthesizing carbon nanotubes

A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same

Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween

A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes. The example method may be directed to identifying a gas, and may include measuring a first current responsive to a first applied voltage during a first mode of operation, comparing the first measured current with a plurality of first index current values to obtain a first comparison result, each of the plurality of first index current values associated with one of a plurality of gases, measuring a second current responsive to a second applied voltage during a second mode of operation, comparing the second measured current with a plurality of second index current values to obtain a second comparison result, each of the plurality of second index current values associated with one of the plurality of gases and determining gas characteristic information based on the first and second comparison results.

Gas sensor and method thereof

In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

Method of manufacturing magnetic random access memory including middle oxide layer

A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Nano-elastic memory device and method of manufacturing the same

Method of manufacturing a multi-purpose magnetic film structure

A method of growing single-walled carbon nanotubes. The method may include supplying at least one of an oxidant and an etchant into a vacuum chamber and supplying a source gas into the vacuum chamber to grow carbon nanotubes on a substrate in an oxidant or an etchant atmosphere. The carbon nanotubes may be grown in an HO plasma atmosphere. The carbon nanotubes may be grown at a temperature less than 500&#xb0; C.

Method of growing single-walled carbon nanotubes

In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate

A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.

Method for manufacturing zinc oxide nanowires and device having the same

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Seoul, South Korea

Wan-jun Park