Samsung Electronics Co., Ltd.

Samsung Display Devices Co., Ltd.

Jung-hyun Lee

Sang-Jun Choi

Yo-sep Min

Young-jin Cho

Chang-Soo Lee

Bum-seok Seo

Dong-joon Ma

Hyung-jin Bae

Young-soo Park

Myoung-jae Lee

Young-Soo Park

Sung-ho Park

Sang-Bong Bang

Kyu-sik Kim

June-key Lee

Yong-kyun Lee

Sang-jin Park

I-hun Song

Wan-jun Park

Yoon-Ho Khang

Tae-wan Kim

Sung-Ho Park

Xianyu Wenxu

Han-sung Yu

Yong-young Park

Soon-ki Kwon

Yun-hi Kim

Won-tae Lee

Dae-sig Kim

Dong-cheol Shin

Yeon-Hee Kim

Jun-hwan Ahn

Jae-young Choi

Ho Young Lee

Nae-in Lee

Dong-Woo Kim

Young-Jin Cho

Suk-Pil Kim

Jong-min Kim

Sang-Woo Kim

Wenxu Xianyu

Young-Ju Kim

Hwa-Sung Rhee

Chang-soo Lee

June-mo Koo

Chung-woo Kim

Eun-hong Lee

Won-bong Choi

In-Kyeong Yoo

Soon-ho Kim

Soo-doo Chae

Chang-Wook Moon

Sang-min Shin

Choong-Rae Cho

Eun-ju Bae

Moon-kyung Kim

Joong S Jeon

Hion-suck Baik

Suk-pil Kim

Jong-Pyo Kim

Young-eal Kim

Se-Young Cho

Jung-Hyoung Lee

Soon-won Hwang

Hyun-sang Hwang

Seok-jae Chung

Yeon-Sik Park

A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate insulation layer formed on a silicon substrate, at least one nanorod embedded in the gate insulation layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate insulation layer between the source electrode and the drain electrode.

Field effect transistor having germanium nanorod and method of manufacturing the same

Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

Non-volatile memory device including dummy electrodes and method of fabricating the same

Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 &#x3bc;m in order to generate a high resolution color image. As such, resolution saturation may be avoided.

Stack-type image sensor

Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

Methods of preparing a graphene sheet

A zoom lens and a photographing device including the zoom lens. The zoom lens includes: a first lens group having a negative refractive power; a second lens group having a positive refractive power; and a third lens group having a positive refractive power, which are sequentially arranged in a direction from an object side to an image side, wherein the first lens group comprises a first lens that is biconcave and is closest to the object side. Accordingly, a compact and low-priced zoom lens having a high magnification may be manufactured.

Zoom lens and photographing device having the same

The semiconductor memory device includes a variable resistance device having a solid electrolyte in a three-dimensional structure. The variable resistance device includes a first electrode; the solid electrolyte, which has at least two regions with different heights, formed on the first electrode; and a second electrode made of a conductive material formed on the solid electrolyte to cover the regions with different heights. In addition, a multibit semiconductor memory device is provided which includes a bias circuit that can control the intensity of a current and time the current is supplied to the variable resistance device inside a memory cell in multiple steps to configure multibits.

Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof

A data storage and a semiconductor memory device including the same are provided, the data storage including a lower electrode, a first discharge prevention layer stacked on the lower electrode, a phase-transition layer on the first discharge prevention layer, a second discharge prevention layer stacked on the phase-transition layer, and an upper electrode stacked on the second discharge prevention layer. The phase transition layer includes oxygen and exhibits two different resistance characteristics depending on whether an insulating property thereof changed. The first and second discharge prevention layers block discharge of the oxygen from the phase transition layer.

Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same

Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.

Data recording medium for data storage and method of recording or erasing data using the same

Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate.

Electron beam annealing apparatus and annealing methods using the same

Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.

Resistive memory device and method of manufacturing the same

Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.

Method of manufacturing silicon film by using silicon solution process

Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of CuO between the first electrode and the second electrode.

Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same

Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process.

Method of manufacturing crystalline silicon

Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.

Nonvolatile memory device and method of fabricating the same

A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.

Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same

Growing community of inventors

Yongin-si, South Korea

Jung-hyun Lee