Samsung Electronics Co., Ltd.

Other

In-Kyeong Yoo

Myoung-jae Lee

Seung-eon Ahn

Sun-ae Seo

Eun-hong Lee

Choong-Rae Cho

Chang-Wook Moon

Young-Kwan Cha

Young-Soo Joung

Yoon-Dong Park

Sung-Il Cho

Sang-jin Park

Dong-wook Kim

Jung-hyun Lee

Sang-Yoon Lee

David Seo

Dong-Chul Kim

Jong-wan Kim

In-gyu Baek

Wenxu Xianyu

Takashi Noguchi

Wan-jun Park

Young-Soo Park

Sang-mock Lee

Chul-Woo Park

Chee-kheng Lim

Young-Bae Kim

Sung-hoon Choa

Jae-woong Hyun

Jung-Woo Kim

Sang-Jun Choi

Chang-Hoon Choi

Sun-Ae Seo

Hye-Young Kim

Sang-Jin Park

El Mostafa Bourim

Stefanovich Genrikh

Dong Chul Kim

In-Gyu Baek

Hong-Seok Lee

In-Sook Kim

Byoung-ho Park

Seung-woon Lee

Soo-Hwan Jeong

Seung-Hoon Han

Seung-Eon Ahn

Chang-Jung Kim

Moon-Gyu Han

Myoung-Jae Lee

Ho-Jung Kim

Sun-Kook Kim

Byoung-Ho Park

Yong-Soo Joung

David c/o Samsung Advanced Institute Seo

Young-Kwan c/o Samsung Advanced Institute Cha

Wan-Jun Park

Sun-Ae Seoul National University Seo

Sun-Ae 932-301 Seo

A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.

Nonvolatile memory device and nonvolatile memory array including the same

A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same

A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

Non-volatile memory devices and methods of fabricating the same

A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same

Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

Magnetic domain data storage devices and methods of operating the same

A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.

Nonvolatile memory device and method including resistor and transistor

Resistive memory devices having at least one varistor and methods of operating the same are disclosed. The resistive memory device may include at least one bottom electrode line, at least one top electrode line crossing the at least one bottom electrode line, and at least one stack structure disposed at an intersection of the at least one top electrode line and the at least one bottom electrode line including a varistor and a data storage layer.

Resistive RAM having at least one varistor and methods of operating the same

A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines

A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.

In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

Electronic device and method of manufacturing the same

A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.

Semiconductor memory device having metal-insulator transition film resistor

An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

Electrode structure having at least two oxide layers and non-volatile memory device having the same

Transistor and method of operating transistor

Growing community of inventors

Suwon-si, South Korea

In-Kyeong Yoo