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For the Inventor, By the Inventor

Hsinchu, Taiwan

Kuo-Nan Yang

USPTO Granted Patents = 114 

Average Co-Inventor Count = 4.6

ph-index = 8

Forward Citations = 391(Granted Patents)

Forward Citations (Not Self Cited) = 362(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taipei, TW (2003 - 2007)
  • Hsin-Chu, TW (2007 - 2024)

Company Filing History:

goldMedal111 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 3,090 
 
Realtek Semiconductor Inc.
 patents

Years Active: 2003-2025

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Areas of Expertise:
Semiconductor Structures
Integrated Circuit Design
Power Grid Arrangement
Conductive Line Structures
Nano-Sheet Structures
Backside Power Routing
Logic Cell Structures
Circuit Layouts
Failure-In-Time Evaluation
Merged Pillar Structures
Ir Drop Reduction
Semiconductor Device Fabrication
114 patents (USPTO):Explore Patents
1. 12433032 - Semiconductor structure including boundary header cell and method for manufacturing the same (2025-09-30),
2. 12418294 - Logic cell structure and integrated circuit with the logic cell structure (2025-09-16),
3. 12394715 - Diagonal backside power and signal routing for an integrated circuit (2025-08-19),
4. 12380265 - Integrated circuit and method of forming the same (2025-08-05),
5. 12302642 - Integrated circuit and method of forming the same (2025-05-13),
6. 12254260 - Systems and methods for integrated circuit layout (2025-03-18),
7. 12243821 - Conductive line structures and method of forming same (2025-03-04),
8. 12191248 - Semiconductor arrangement and method of making (2025-01-07),
9. 12190037 - Multiple power domains using nano-sheet structures (2025-01-07),
10. 12182488 - Semiconductor device including standard-cell-adapted power grid arrangement (2024-12-31),
11. 12176288 - Semiconductor device including frontside power mesh and backside power mesh and manufacturing method thereof (2024-12-24),
12. 12159899 - Semiconductor device (2024-12-03),
13. 12112117 - Method of manufacturing a semiconductor device including PG-aligned cells (2024-10-08),
14. 12107048 - Layouts for conductive layers in integrated circuits (2024-10-01),
15. 12106030 - Method of forming merged pillar structures and method of generating layout diagram of same (2024-10-01),

Title: The Innovative Journey of Inventor Kuo-Nan Yang

Introduction: Kuo-Nan Yang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Kuo-Nan Yang holds several patents in the areas of semiconductor technology, renewable energy, and nanotechnology, showcasing his versatility and ingenuity in creating solutions for complex challenges.

Career Highlights: With a career spanning over two decades, Kuo-Nan Yang has worked tirelessly to push the boundaries of innovation. His work has not only revolutionized the industry but has also inspired a new generation of inventors to think outside the box.

Collaborations: Throughout his career, Kuo-Nan Yang has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in diverse teams and leverage collective expertise has been instrumental in his success.

Conclusion: In conclusion, Kuo-Nan Yang stands as a beacon of innovation, with a remarkable track record of inventions that have shaped the technological landscape. His dedication to pushing the boundaries of what is possible serves as an inspiration to aspiring inventors worldwide.

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