The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Feb. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hao-Tien Kan, New Taipei, TW;

Yan-Shen You, Taoyuan, TW;

Chin-Shen Lin, Taipei, TW;

Kuo-Nan Yang, Hsinchu, TW;

Chung-Hsing Wang, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/10 (2025.01); H10D 84/85 (2025.01); G06F 30/30 (2020.01); G11C 5/14 (2006.01); H03K 19/00 (2006.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10D 89/10 (2025.01); H10D 84/854 (2025.01); G06F 30/30 (2020.01); G11C 5/14 (2013.01); H03K 19/0008 (2013.01); H03K 19/0013 (2013.01); H10B 10/00 (2023.02); H10B 12/00 (2023.02);
Abstract

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure comprises a first semiconductor device, a second semiconductor device, and a first semiconductor component. The first semiconductor device and the second semiconductor device defining a channel region. The first semiconductor component is disposed in the channel region and configured to control states of a plurality of components in the channel region. The first semiconductor device and the first semiconductor component are located adjacent to a boundary, and the first semiconductor component is electrically isolated from the first semiconductor device.


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