The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
May. 12, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chin-Shen Lin, Taipei City, TW;
Wan-Yu Lo, Taoyuan County, TW;
Kuo-Nan Yang, Hsinchu City, TW;
Chung-Hsing Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides methods and a non-transitory computer readable media for resistance and capacitance (RC) extraction. The method comprises: receiving an electronic layout; selecting a two-dimensional (2D) conductive element from the electronic layout, wherein an aspect ratio of the 2D conductive element is lower than a predetermined threshold; partitioning the 2D conductive element into a plurality of polygons; determining a parasitic capacitance value for each polygon; determining multiple parasitic resistance values for each polygon; determining a total capacitance value of the 2D conductive element based on the parasitic capacitance value for each polygon; and determining a total resistance value of the 2D conductive element based on the multiple parasitic resistance values for each polygon.