Taipei, Taiwan

Kun-Huang Yu

USPTO Granted Patents = 14 

Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2014-2019

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14 patents (USPTO):Explore Patents

Title: **Kun-Huang Yu: Innovator in Memory Device and Semiconductor Structures**

Introduction

Kun-Huang Yu, an accomplished inventor based in New Taipei, Taiwan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 14 patents, he has focused on innovations related to memory devices and semiconductor structures.

Latest Patents

Among his latest patents, Kun-Huang Yu has developed a memory device that comprises a first gate, a second gate, and an inter-gate dielectric layer. Notably, the first gate is embedded within a substrate while the second gate, made of metal, is positioned atop the substrate. A key feature of this invention is the high-k inter-gate dielectric layer, which has a dielectric constant exceeding 10.

In addition, he has disclosed a method of forming a semiconductor structure. This method outlines a process involving a substrate with designated areas of differing heights. The formation of insulating layers, gates, and dummy gates follows a meticulous sequence designed to create necessary trenches for further gate placement, ultimately enhancing semiconductor performance.

Career Highlights

Kun-Huang Yu is currently employed at United Microelectronics Corporation, where he leverages his expertise in semiconductor design and innovation. His work contributes to the advancement of memory technologies, aiding in the continuous evolution of electronic devices.

Collaborations

Throughout his career, Kun-Huang has collaborated with talented individuals such as Shih-Yin Hsiao and Shu-Wen Lin. These partnerships have fostered a collaborative environment that promotes innovative ideas and solutions within the semiconductor industry.

Conclusion

With his impactful patents and collaborative spirit, Kun-Huang Yu stands out as a prominent figure in the realm of semiconductor innovations. His work continues to push the boundaries of technology, enabling advancements that shape the electronics we use daily. His dedication to research and development ensures that he remains a key player in the industry for years to come.

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