The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 28, 2012
Kun-huang Yu, New Taipei, TW;
Chin-fu Chen, Taoyuan County, TW;
Kun-Huang Yu, New Taipei, TW;
Chin-Fu Chen, Taoyuan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A MOS transistor is described, including: a source region and a drain region in a semiconductor substrate, an isolation between the source region and the drain region, a first gate conductor between the source region and the isolation, at least one conductive plug electrically connected to the first gate conductor and penetrating into the isolation, and at least one second gate conductor on the isolation, which is electrically connected to the first gate conductor and the at least one conductive plug. One of the at least one conductive plug is between the first gate conductor and the at least one second gate conductor.