The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jun. 15, 2015
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 21/762 (2013.01); H01L 29/0653 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 29/1045 (2013.01); H01L 29/42368 (2013.01);
Abstract
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a source region, a drain region, a gate, and a dummy contact. The source region and the drain region are formed in the substrate. The gate is formed on the substrate and between the source region and the drain region. The dummy contact includes a plurality of dummy plugs formed on the substrate, wherein the dummy plugs have depths decreasing towards the drain region.
Hsiao, Shih-Yin. (2017). Semiconductor structure having a dummy contact and manufacturing method thereof (U.S. Patent No. 9653558). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9653558
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile