The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Oct. 14, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Kun-Huang Yu, New Taipei, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Wen-Fang Lee, Hsinchu, TW;
Shu-Wen Lin, Hsinchu County, TW;
Kuan-Chuan Chen, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a high-voltage metal-oxide-semiconductor (HVMOS) transistor comprising a substrate, a gate dielectric layer, a gate electrode and a source and drain region. The gate dielectric layer is disposed on the substrate and includes a protruded portion and a recessed portion, wherein the protruded portion is disposed adjacent to two sides of the recessed portion and has a thickness greater than a thickness of the recessed portion. The gate electrode is disposed on the gate dielectric layer. Thus, the protruded portion of the gate dielectric layer can maintain a higher breakdown voltage, thereby keeping the current from leaking through the gate.