The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Oct. 21, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Kun-Huang Yu, New Taipei, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 29/0653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01);
Abstract
A MOS transistor device includes a substrate including a gate formed thereon, and a spacer being formed on a sidewall of the gate; a source region and a drain region formed in the substrate; and at least a first dummy contact formed above the substrate on a drain side of the gate. More important, the first dummy contact is formed apart from a surface of the substrate.
Yu, Kun-Huang. (2016). Metal-oxide-semiconductor transistor device having a drain side dummy contact (U.S. Patent No. 9349818). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9349818
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile