The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Sep. 14, 2017
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Kun-Huang Yu, New Taipei, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/11536 (2017.01); H01L 27/11539 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/11536 (2013.01); H01L 27/11539 (2013.01); H01L 29/42336 (2013.01);
Abstract
Provided is a memory device including a first gate, a second gate and an inter-gate dielectric layer. The first gate is buried in a substrate. The second gate includes metal and is disposed on the substrate. The inter-gate dielectric layer is disposed between the first and second gates. The inter-gate dielectric layer comprises a high-k layer having a dielectric constant of greater than about 10.