The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Apr. 24, 2012
Chiu-te Lee, Hsinchu County, TW;
Ke-feng Lin, Taipei, TW;
Shu-wen Lin, Hsinchu County, TW;
Kun-huang Yu, New Taipei, TW;
Chih-chung Wang, Hsinchu, TW;
Te-yuan Wu, Hsinchu, TW;
Chiu-Te Lee, Hsinchu County, TW;
Ke-Feng Lin, Taipei, TW;
Shu-Wen Lin, Hsinchu County, TW;
Kun-Huang Yu, New Taipei, TW;
Chih-Chung Wang, Hsinchu, TW;
Te-Yuan Wu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.