IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Ki-hyun Hwang

USPTO Granted Patents = 14

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 212(Granted Patents)


Location History:

  • Yongin, KR (2001)
  • Kyungki-do, KR (2002 - 2003)
  • Gyeonggi-do, KR (2006 - 2016)

Company Filing History:

goldMedal14 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2016

Loading Chart...
14 patents (USPTO):Explore Patents
1. 9431416 - Vertical-type nonvolatile memory device and method of manufacturing the same (2016-08-30),
2. 9343546 - Semiconductor device and method of manufacturing the same (2016-05-17),
3. 8008154 - Methods of forming impurity containing insulating films and flash memory devices including the same (2011-08-30),
4. 7799639 - Methods of fabricating non-volatile memory devices including a chlorine cured tunnel oxide layer (2010-09-21),
5. 7622383 - Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films (2009-11-24),
6. 7510935 - Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device (2009-03-31),
7. 7473959 - Non-volatile semiconductor memory devices and methods of fabricating the same (2009-01-06),
8. 7419888 - Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same (2008-09-02),
9. 7153750 - Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes (2006-12-26),
10. 7007933 - Method and apparatus for supplying a source gas (2006-03-07),
11. 7005389 - Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants (2006-02-28),
12. 6620686 - Methods of forming capacitors having a polymer on a portion thereof that inhibits the formation of hemispherical grain (HSG) nodules on that portion and capacitors formed thereby (2003-09-16),
13. 6385020 - Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby (2002-05-07),
14. 6207488 - Method for forming a tantalum oxide capacitor using two-step rapid thermal nitridation (2001-03-27),

Title: Innovations of Inventor Ki-hyun Hwang

Introduction: Ki-hyun Hwang is a prominent inventor based in Gyeonggi-do, South Korea. With an impressive portfolio of 14 patents, he has made significant contributions to the field of semiconductor technology. His innovative approaches have propelled advancements in nonvolatile memory devices and semiconductor devices, establishing him as a leading figure within the industry.

Latest Patents: Ki-hyun Hwang's latest patents include the development of a vertical-type nonvolatile memory device and a method for manufacturing it. This groundbreaking device features a first vertical channel structure and stacked structures, which include gate electrodes and insulating layers. The architecture allows for improved performance of memory devices, with gate layers arranged vertically. Another significant patent details a semiconductor device that incorporates a channel region with a specific nitrogen concentration distribution, enabling enhanced functionality and efficiency.

Career Highlights: Ki-hyun Hwang has established himself as a key innovator in his field while working at Samsung Electronics Co., Ltd. His contributions have not only led to successful patent applications but have also played a crucial role in the evolution of semiconductor technologies. The impact of his work is felt across various applications, enhancing the performance and sustainability of electronic devices.

Collaborations: Throughout his career, Ki-hyun has collaborated with talented individuals such as Sung-hae Lee and Jae-young Ahn. These joint efforts have fostered an environment of creativity and innovation, facilitating the development of cutting-edge technologies and further contributing to Hwang's accomplishments within the semiconductor sector.

Conclusion: As an inventor with a growing list of patents, Ki-hyun Hwang continues to influence the landscape of semiconductor technology. His inventive spirit and collaborative approach at Samsung Electronics Co., Ltd. play a vital role in pushing boundaries and driving advancements within the industry. With each new innovation, Hwang reinforces the importance of research and development in creating technologies that shape our future.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…