The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jul. 28, 2006
Sang-ryol Yang, Gyeonggi-do, KR;
Kyong-hee Joo, Gyeonggi-do, KR;
In-seok Yeo, Seoul, KR;
Ki-hyun Hwang, Gyeonggi-do, KR;
Seung-hyun Lim, Seoul, KR;
Sang-Ryol Yang, Gyeonggi-do, KR;
Kyong-Hee Joo, Gyeonggi-do, KR;
In-Seok Yeo, Seoul, KR;
Ki-Hyun Hwang, Gyeonggi-do, KR;
Seung-Hyun Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.