The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Nov. 17, 2006
Sung-hae Lee, Gyeonggi-do, KR;
Chang-hyun Lee, Gyeonggi-do, KR;
Ki-hyun Hwang, Gyeonggi-do, KR;
Sung-kweon Baek, Gyeonggi-do, KR;
Kwang-min Park, Seoul, KR;
Sung-Hae Lee, Gyeonggi-do, KR;
Chang-Hyun Lee, Gyeonggi-do, KR;
Ki-Hyun Hwang, Gyeonggi-do, KR;
Sung-Kweon Baek, Gyeonggi-do, KR;
Kwang-Min Park, Seoul, KR;
Abstract
Nonvolatile memory devices and related methods of fabricating nonvolatile memory devices are disclosed. A nonvolatile memory device includes a tunnel insulation film on a semiconductor substrate, a charge-trapping layer on the tunnel insulation film, a block insulation film on the charge-trapping layer, and a gate electrode on the blocking insulation film. The blocking insulation film includes a stacked film structure of a high-dielectric film and a barrier insulation film. The high-dielectric film has a first potential barrier relative to the charge-trapping layer. The barrier insulation film has a second potential barrier relative to the charge-trapping layer which is higher than the first potential barrier. The blocking insulation film has a thickness in a range of about 5 Å to about 15 Å.