The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Aug. 31, 2006
Sung-hae Lee, Gyeonggi-do, KR;
Ju-wan Lim, Seoul, KR;
Jae-young Ahn, Gyeonggi-do, KR;
Sang-ryol Yang, Gyeonggi-do, KR;
Ki-hyun Hwang, Gyeonggi-do, KR;
Sung-Hae Lee, Gyeonggi-do, KR;
Ju-Wan Lim, Seoul, KR;
Jae-Young Ahn, Gyeonggi-do, KR;
Sang-Ryol Yang, Gyeonggi-do, KR;
Ki-Hyun Hwang, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In an embodiment, a method of manufacturing a charge-trapping dielectric and a silicon-oxide-nitride-oxide-silicon (SONOS)-type non-volatile semiconductor device includes forming the charge-trapping dielectric, and a first oxide layer including silicon oxide. A silicon nitride layer including silicon-rich nitride is formed by a cyclic chemical vapor deposition (CVD) process using a silicon source material and a nitrogen source gas. A second oxide layer is formed on the silicon nitride layer. Hence, the charge-trapping dielectric having good erase characteristics is formed. In the SONOS-type non-volatile semiconductor device including the charge-trapping dielectric, a data erase process may be stably performed.