The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Oct. 22, 1998
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for forming a Ta,O,capacitor on a semiconductor device reduces leakage current and increases cell capacitance by utilizing a two-step rapid thermal nitridation (RTN) process to form a nitride layer on a hemi-spherical grain (HSG) storage node. The first RTN process is performed in a NH,atmosphere at 800±40° C. for 180±60 seconds, thereby forming a nitride layer having a thickness of about 4 Å. The second RTN process is performed in a NH,atmosphere at 850±40° C. for 180±60 seconds, thereby increasing the thickness of the nitride layer to at least about 7 Å. Therefore, a nitride layer that is thick enough to act as an oxidation barrier is achieved, but agglomeration of the HSGs on the storage node due to high process temperatures is prevented. To make the structure more readily adaptable to process for manufacturing DRAMs with Ta,O,dielectric layers, a rapid thermal oxidation (RTO) process can then be performed in an O,or N,O atmosphere at 850±50° C. for 90±30 seconds to thereby form a combined layer comprising a nitride layer and an oxide layer.