The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Apr. 13, 2004
Eun-ae Chung, Gyeonggi-do, KR;
Ki-hyun Hwang, Gyeonggi-do, KR;
Jung-hwan OH, Gyeonggi-do, KR;
Hyo-jung Kim, Gyeonggi-do, KR;
Seok-woo Nam, Gyeonggi-do, KR;
Won-sik Shin, Seoul, KR;
U-in Chung, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Hee-seok Kim, Gyeonggi-do, KR;
Beom-jun Jin, Seoul, KR;
Eun-ae Chung, Gyeonggi-do, KR;
Ki-hyun Hwang, Gyeonggi-do, KR;
Jung-hwan Oh, Gyeonggi-do, KR;
Hyo-jung Kim, Gyeonggi-do, KR;
Seok-woo Nam, Gyeonggi-do, KR;
Won-sik Shin, Seoul, KR;
U-in Chung, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Hee-seok Kim, Gyeonggi-do, KR;
Beom-jun Jin, Seoul, KR;
Abstract
A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySiGelayer stacked on the metallic layer. Methods of forming these capacitors also are provided.