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Seoul, South Korea

Beom-jun Jin

This inventor holds 21 USPTO granted patents, primarily in Non-Volatile Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2003-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Beom-jun Jin. Retrieved from https://idiyas.com/inventor/beom-jun-jin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21

% Patents Active = 81.0

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 156(Granted Patents)


Company Filing History:

goldMedal21 out of 138,671 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2017

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Areas of Expertise:
Bypass Pad
Vertical NAND Strings
Non-Volatile Memory
Integrated Circuit Devices
Leakage Currents
Transistor Manufacturing
Silicon-Germanium
Contact Resistance
Storage Node
Gate Structures
Capacitors
Test Patterns
21 patents (USPTO):Explore Patents
1. 9627360 - Circuit board having bypass pad (2017-04-18),
2. 9449716 - Circuit board having bypass pad (2016-09-20),
3. 9373633 - Methods of forming non-volatile memory devices including vertical NAND strings (2016-06-21),
4. 9171644 - Circuit board having bypass pad (2015-10-27),
5. 9069036 - Circuit board having bypass pad (2015-06-30),
6. 8971118 - Methods of forming non-volatile memory devices including vertical NAND strings (2015-03-03),
7. 8917107 - Circuit board having bypass pad (2014-12-23),
8. 8659946 - Non-volatile memory devices including vertical NAND strings and methods of forming the same (2014-02-25),
9. 8325527 - Non-volatile memory devices including vertical NAND strings and methods of forming the same (2012-12-04),
10. 7785964 - Non-volatile semiconductor memory device and method of manufacturing the same (2010-08-31),
11. 7399670 - Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed (2008-07-15),
12. 7271408 - Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistors (2007-09-18),
13. 7153750 - Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes (2006-12-26),
14. 7060575 - Semiconductor device having transistor and method of manufacturing the same (2006-06-13),
15. 7009257 - Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby (2006-03-07),

Title: The Innovative Journey of Beom-jun Jin

Introduction: Beom-jun Jin, a pioneering inventor hailing from Seoul, South Korea, has made significant contributions to the world of technology and innovation.

Latest Patents: Beom-jun Jin's latest patents focus on cutting-edge advancements in artificial intelligence and renewable energy technologies, showcasing his commitment to creating a sustainable future.

Career Highlights: With a career spanning over two decades, Beom-jun Jin has established himself as a leading figure in the tech industry, with a strong focus on research and development.

Collaborations: Throughout his career, Beom-jun Jin has collaborated with top research institutions, universities, and tech companies worldwide, fostering a culture of innovation and knowledge sharing.

Conclusion: Beom-jun Jin's relentless pursuit of innovation and his groundbreaking inventions continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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