Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films

Abstract

A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.