The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Aug. 08, 2008
Young-jin Noh, Gyeonggi-do, KR;
Bon-young Koo, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Ki-hyun Hwang, Gyeonggi-do, KR;
Chul-sung Kim, Gyeonggi-do, KR;
Sung-kweon Baek, Gyeonggi-do, KR;
Jin-hwa Heo, Gyeonggi-do, KR;
Young-Jin Noh, Gyeonggi-do, KR;
Bon-Young Koo, Gyeonggi-do, KR;
Si-Young Choi, Gyeonggi-do, KR;
Ki-Hyun Hwang, Gyeonggi-do, KR;
Chul-Sung Kim, Gyeonggi-do, KR;
Sung-Kweon Baek, Gyeonggi-do, KR;
Jin-Hwa Heo, Gyeonggi-do, KR;
Abstract
Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.