IDiyas

For the Inventor, By the Inventor

Inchun, South Korea

Jin-Hwa Heo

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 176(Granted Patents)


Location History:

  • Incheon, KR (2003 - 2004)
  • Inchun-shi, KR (2004 - 2007)
  • Inchun, KR (2003 - 2008)
  • Gyeonggi-do, KR (2006 - 2011)
  • Suwon-si, KR (2013)

Company Filing History:

goldMedal11 out of 131,324 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2013

Loading Chart...
11 patents (USPTO):Explore Patents
1. 8525275 - Methods of forming non-volatile memory devices (2013-09-03),
2. 8008154 - Methods of forming impurity containing insulating films and flash memory devices including the same (2011-08-30),
3. 7535061 - Fin-field effect transistors (Fin-FETs) having protection layers (2009-05-19),
4. 7351661 - Semiconductor device having trench isolation layer and a method of forming the same (2008-04-01),
5. 7160787 - Structure of trench isolation and a method of forming the same (2007-01-09),
6. 7141456 - Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers (2006-11-28),
7. 6756654 - Structure of trench isolation and a method of forming the same (2004-06-29),
8. 6740955 - Trench device isolation structure (2004-05-25),
9. 6683354 - Semiconductor device having trench isolation layer and a method of forming the same (2004-01-27),
10. 6593207 - Method of forming a trench device isolation structure with upper liner pattern (2003-07-15),
11. 6566229 - Method of forming an insulating layer in a trench isolation type semiconductor device (2003-05-20),

Title: Innovations of Jin-Hwa Heo in Non-Volatile Memory Devices

Introduction

Jin-Hwa Heo is a prominent inventor based in Inchun, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 11 patents. His work focuses on enhancing data retention properties and durability in memory technology.

Latest Patents

One of his latest patents is titled "Methods of forming non-volatile memory devices." This invention includes a dielectric layer positioned between a charge storage layer and a substrate. The innovation aims to reduce free bonds in the dielectric layer, which helps prevent charges from leaking or being trapped, thereby improving the data retention properties of non-volatile memory devices. Another notable patent is "Methods of forming impurity containing insulating films and flash memory devices including the same." This patent describes a method for forming an insulating film on a substrate, where impurities are injected using a thermal process to create concentration peaks at different layers of the film. This technique enhances the performance of flash memory devices without the need for plasma.

Career Highlights

Jin-Hwa Heo is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His innovative work has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

He collaborates with talented coworkers, including Soo-Jin Hong and Si-Young Choi, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Jin-Hwa Heo's contributions to non-volatile memory technology through his patents demonstrate his expertise and commitment to innovation. His work continues to influence advancements in the field, ensuring better performance and reliability in memory devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…