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For the Inventor, By the Inventor

Inchun, South Korea

Jin-Hwa Heo

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 176(Granted Patents)


Location History:

  • Incheon, KR (2003 - 2004)
  • Inchun-shi, KR (2004 - 2007)
  • Inchun, KR (2003 - 2008)
  • Gyeonggi-do, KR (2006 - 2011)
  • Suwon-si, KR (2013)

Company Filing History:

goldMedal11 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2013

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11 patents (USPTO):Explore Patents
1. 8525275 - Methods of forming non-volatile memory devices (2013-09-03),
2. 8008154 - Methods of forming impurity containing insulating films and flash memory devices including the same (2011-08-30),
3. 7535061 - Fin-field effect transistors (Fin-FETs) having protection layers (2009-05-19),
4. 7351661 - Semiconductor device having trench isolation layer and a method of forming the same (2008-04-01),
5. 7160787 - Structure of trench isolation and a method of forming the same (2007-01-09),
6. 7141456 - Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers (2006-11-28),
7. 6756654 - Structure of trench isolation and a method of forming the same (2004-06-29),
8. 6740955 - Trench device isolation structure (2004-05-25),
9. 6683354 - Semiconductor device having trench isolation layer and a method of forming the same (2004-01-27),
10. 6593207 - Method of forming a trench device isolation structure with upper liner pattern (2003-07-15),
11. 6566229 - Method of forming an insulating layer in a trench isolation type semiconductor device (2003-05-20),

Title: Innovations of Jin-Hwa Heo in Non-Volatile Memory Devices

Introduction

Jin-Hwa Heo is a prominent inventor based in Inchun, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 11 patents. His work focuses on enhancing data retention properties and durability in memory technology.

Latest Patents

One of his latest patents is titled "Methods of forming non-volatile memory devices." This invention includes a dielectric layer positioned between a charge storage layer and a substrate. The innovation aims to reduce free bonds in the dielectric layer, which helps prevent charges from leaking or being trapped, thereby improving the data retention properties of non-volatile memory devices. Another notable patent is "Methods of forming impurity containing insulating films and flash memory devices including the same." This patent describes a method for forming an insulating film on a substrate, where impurities are injected using a thermal process to create concentration peaks at different layers of the film. This technique enhances the performance of flash memory devices without the need for plasma.

Career Highlights

Jin-Hwa Heo is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His innovative work has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

He collaborates with talented coworkers, including Soo-Jin Hong and Si-Young Choi, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Jin-Hwa Heo's contributions to non-volatile memory technology through his patents demonstrate his expertise and commitment to innovation. His work continues to influence advancements in the field, ensuring better performance and reliability in memory devices.

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