The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Jun. 18, 2004
Deok-hyung Lee, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
In-soo Jung, Gyeonggi-do, KR;
Jin-hwa Heo, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
Si-Young Choi, Gyeonggi-do, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
In-Soo Jung, Gyeonggi-do, KR;
Jin-Hwa Heo, Gyeonggi-do, KR;
Abstract
Methods for fabricating Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is formed on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is formed in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is formed on the first insulation layer and a second insulation layer is formed on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin. Related Fin-FETs are also provided.