The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Nov. 01, 2010
Applicants:
Jin-hwa Heo, Suwon-si, KR;
Chul-sung Kim, Seongnam-si, KR;
Bon-young Koo, Suwon-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Chang-hyun Lee, Suwon-si, KR;
Inventors:
Jin-Hwa Heo, Suwon-si, KR;
Chul-Sung Kim, Seongnam-si, KR;
Bon-Young Koo, Suwon-si, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Chang-Hyun Lee, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.