The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Oct. 25, 2006
Deok-hyung Lee, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
In-soo Jung, Gyeonggi-do, KR;
Jin-hwa Heo, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
Si-Young Choi, Gyeonggi-do, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
In-Soo Jung, Gyeonggi-do, KR;
Jin-Hwa Heo, Gyeonggi-do, KR;
Abstract
Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is provided on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is provided in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is provided on the first insulation layer and a second insulation layer is provided on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin.