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For the Inventor, By the Inventor

Angier, NC, United States of America

Kevin J Linthicum

USPTO Granted Patents = 52 

 

Average Co-Inventor Count = 3.2

ph-index = 24

Forward Citations = 2,618(Granted Patents)

Forward Citations (Not Self Cited) = 2,376(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Angler, NC (US) (2013)
  • Angier, NC (US) (2001 - 2019)
  • Cary, NC (US) (2006 - 2023)

Company Filing History:

goldMedal22 out of 1,435 
 
North Carolina State University
 patents
silverMedal11 out of 18 
 
Nitronex Corporation
 patents
bronzeMedal8 out of 1,231 
 
International Rectifier Corporation
 patents
4. 8 out of 334 
 
Macom Technology Solutions Holdings, Inc.
 patents
5. 3 out of 278 
 
Infineon Technologies Americas Corp.
 patents

Years Active: 2001-2025

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52 patents (USPTO):Explore Patents
1. 12453151 - Parasitic channel mitigation in semiconductor structures (2025-10-21),
2. 11810955 - Parasitic channel mitigation using silicon carbide diffusion barrier regions (2023-11-07),
3. 11264465 - Parasitic channel mitigation using silicon carbide diffusion barrier regions (2022-03-01),
4. 10177229 - Semiconductor material having a compositionally-graded transition layer (2019-01-08),
5. 9806182 - Parasitic channel mitigation using elemental diboride diffusion barrier regions (2017-10-31),
6. 9773898 - III-nitride semiconductor structures comprising spatially patterned implanted species (2017-09-26),
7. 9673281 - Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions (2017-06-06),
8. 9627473 - Parasitic channel mitigation in III-nitride material semiconductor structures (2017-04-18),
9. 9461119 - Semiconductor structure with compositionally-graded transition layer (2016-10-04),
10. 9437687 - III-nitride based semiconductor structure (2016-09-06),
11. 9437686 - Gallium nitride devices with discontinuously graded transition layer (2016-09-06),
12. 9064775 - Gallium nitride semiconductor structures with compositionally-graded transition layer (2015-06-23),
13. 8937335 - Gallium nitride devices with aluminum nitride intermediate layer (2015-01-20),
14. 8928035 - Gallium nitride devices with gallium nitride alloy intermediate layer (2015-01-06),
15. 8928034 - Gallium nitride devices with aluminum nitride alloy intermediate layer (2015-01-06),

Title: The Innovative Mind of Kevin J Linthicum

Introduction:

Kevin J Linthicum, a talented inventor hailing from Angier, NC (US), is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Kevin J Linthicum holds several patents in the areas of software development, artificial intelligence, and renewable energy technologies, showcasing his diverse range of expertise and creativity.

Career Highlights:

With a career spanning over two decades, Kevin J Linthicum has worked for leading tech companies, where he spearheaded projects that have revolutionized the industry. His commitment to pushing boundaries and exploring new ideas has earned him a reputation as a visionary in the field.

Collaborations:

Throughout his career, Kevin J Linthicum has collaborated with top researchers, engineers, and designers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several cutting-edge technologies.

Conclusion:

In conclusion, Kevin J Linthicum's passion for innovation and his relentless pursuit of excellence have cemented his status as a respected inventor in the tech community. His contributions continue to inspire the next generation of inventors and shape the future of technology.

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