IDiyas

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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9437687 B1

PDFFull Text
Date of Patent:
Sep. 06, 2016

Filed:

Jun. 18, 2015

Iii-nitride based semiconductor structure

Applicant:

Infineon Technologies Americas Corp, El Segundo, CA (US);

Inventors:

T. Warren Weeks, Jr., Raleigh, NC (US);

Edwin L. Piner, Cary, NC (US);

Thomas Gehrke, Boise, ID (US);

Kevin J. Linthicum, Angier, NC (US);

Assignee:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); C30B 23/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 29/205 (2006.01); H01L 29/225 (2006.01); H01L 29/15 (2006.01); H01L 33/12 (2010.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/201 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C30B 23/02 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02598 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/155 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 29/225 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); Y10T 428/24942 (2015.01); Y10T 428/26 (2015.01); Y10T 428/265 (2015.01);
Abstract

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

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