For the Inventor, By the Inventor

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Durham, NC, United States of America

Nitronex Corporation

USPTO Granted Patents = 18

% Expired Patents = 11.1

Trademarks = 1

Forward Citations = 1,088

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18 inventors (with patents filed for the assignee):

Edwin Lanier Piner (13 out of 33 patents)

Kevin J Linthicum (11 out of 52 patents)

Pradeep Rajagopal (10 out of 18 patents)

4. John Claassen Roberts (9 out of 21 patents)

5. Jerry Wayne Johnson (6 out of 21 patents)

6. Allen W Hanson (5 out of 28 patents)

7. T Warren Weeks, Jr (5 out of 19 patents)

8. Robert Joseph Therrien (5 out of 16 patents)

9. Ricardo M Borges (5 out of 6 patents)

10. Andrei Vescan (4 out of 5 patents)

11. Jeffrey D Brown (4 out of 5 patents)

12. Thomas Gehrke (3 out of 71 patents)

13. James W Cook, Jr (3 out of 7 patents)

14. Walter H Nagy (3 out of 8 patents)

15. Sameer Singhal (3 out of 7 patents)

18 patents: Sort by Forward Citations

1. 7791106 - Gallium nitride material structures including substrates and methods associated with the same (2010-09-07),

2. 7745848 - Gallium nitride material devices and thermal designs thereof (2010-06-29),

3. 7687827 - III-nitride materials including low dislocation densities and methods associated with the same (2010-03-30),

4. 7569871 - Gallium nitride material transistors and methods associated with the same (2009-08-04),

5. 7566913 - Gallium nitride material devices including conductive regions and methods associated with the same (2009-07-28),

6. 7365374 - Gallium nitride material structures including substrates and methods associated with the same (2008-04-29),

7. 7361946 - Semiconductor device-based sensors (2008-04-22),

8. 7352016 - Gallium nitride material transistors and methods associated with the same (2008-04-01),

9. 7352015 - Gallium nitride materials and methods associated with the same (2008-04-01),

10. 7339205 - Gallium nitride materials and methods associated with the same (2008-03-04),

11. 7247889 - III-nitride material structures including silicon substrates (2007-07-24),

12. 7233028 - Gallium nitride material devices and methods of forming the same (2007-06-19),

13. 7135720 - Gallium nitride material transistors and methods associated with the same (2006-11-14),

14. 7071498 - Gallium nitride material devices including an electrode-defining layer and methods of forming the same (2006-07-04),

15. 6956250 - Gallium nitride materials including thermally conductive regions (2005-10-18),

Company Overview

Nitronex Corporation, based in Durham, NC, specializes in the development and manufacturing of advanced semiconductor technologies, particularly focusing on gallium nitride (GaN) solutions. The company is known for its innovative approaches in power electronics, enabling high-efficiency performance in various applications such as telecommunications, renewable energy, and industrial systems. Nitronex's expertise in GaN technology positions it as a key player in the semiconductor industry, driving advancements in energy efficiency and performance.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

18 Patents

#45 in Durham, NC

#395 in North Carolina

#17,974 in US

#34,244 in the World

Durham, NC, United States of America

Nitronex Corporation

Forward Citations = 1,088

18 inventors:

Edwin Lanier Piner (13 out of 33 patents)

Kevin J Linthicum (11 out of 52 patents)

Pradeep Rajagopal (10 out of 18 patents)

4. John Claassen Roberts (9 out of 21 patents)

5. Jerry Wayne Johnson (6 out of 21 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Nitronex Corporation. Retrieved from https://idiyas.com/company/nitronex

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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