The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Feb. 01, 2008
Edwin L. Piner, Cary, NC (US);
Pradeep Rajagopal, Raleigh, NC (US);
John C. Roberts, Hillsborough, NC (US);
Kevin J. Linthicum, Cary, NC (US);
Edwin L. Piner, Cary, NC (US);
Pradeep Rajagopal, Raleigh, NC (US);
John C. Roberts, Hillsborough, NC (US);
Kevin J. Linthicum, Cary, NC (US);
Nitronex Corporation, Durham, NC (US);
Abstract
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.