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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10177229 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Aug. 18, 2016

Semiconductor material having a compositionally-graded transition layer

Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventors:

T. Warren Weeks, Jr., Raleigh, NC (US);

Edwin L. Piner, Cary, NC (US);

Thomas Gehrke, Boise, ID (US);

Kevin J. Linthicum, Angier, NC (US);

Assignee:

MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/15 (2006.01); C30B 23/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 29/205 (2006.01); H01L 29/225 (2006.01); H01L 29/20 (2006.01); H01L 33/12 (2010.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/201 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 33/06 (2010.01); C30B 29/06 (2006.01); C30B 29/68 (2006.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 29/155 (2013.01); C30B 23/02 (2013.01); C30B 23/025 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 25/183 (2013.01); C30B 29/06 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02598 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/225 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); Y10T 428/24942 (2015.01); Y10T 428/26 (2015.01); Y10T 428/265 (2015.01);
Abstract

A semiconductor material includes a compositionally-graded transition layer, an intermediate later and a gallium nitride material layer. The compositionally-graded transition layer has a back surface and a top surface, and includes a gallium nitride alloy. The gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface. The intermediate layer is formed under the compositionally-graded transition layer. The gallium nitride material layer is formed over the compositionally-graded transition layer, and has a crack level of less than 0.005 μm/μm.

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