For the Inventor, By the Inventor

Enter inventor name

Shibuya Tokyo, Japan

Kazuya Nishihori

USPTO Granted Patents = 11 (Patent Applications = 3)

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 69(Granted Patents)

Location History:

Tokyo-to, JP (2000)
Shibuya Tokyo, JP (2017 - 2019)
Tokyo, JP (1993 - 2023)

Company Filing History:

11 out of 52,722

Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

where one patent can have more than one assignee

Years Active: 1993-2025

Loading Chart...

11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12453122 - Semiconductor device having semiconductor region at bottom of separation trench and connecting two semiconductor regions over which control electrode extends (2025-10-21),

2. 11715796 - High frequency transistor (2023-08-01),

3. 10347655 - Semiconductor switch (2019-07-09),

4. 9768268 - Semiconductor device (2017-09-19),

5. 8674357 - Method for measuring impurity concentration profile, wafer used for same, and method for manufacturing semiconductor device using same (2014-03-18),

6. 6936870 - Heterojunction type compound semiconductor field effect transistor and its manufacturing method (2005-08-30),

7. 6134424 - High-frequency power amplifier and mobile communication device using same (2000-10-17),

8. 6114195 - Manufacturing method of compound semiconductor field effect transistor (2000-09-05),

9. 5929473 - MMIC semiconductor device with WN.sub.x capacitor electrode (1999-07-27),

10. 5670808 - Metal oxide capacitor with a WN.sub.X electrode (1997-09-23),

11. 5273937 - Metal semiconductor device and method for producing the same (1993-12-28),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…